Semiconductors and optoelectronics - KAMA8M01

Goal(s)

The choice of materials and optimization of their optoelectronic properties, mainly in the field of visible and infrared emission, photodetection and imaging, are discussed.
Show how the basic physical properties of semiconductor materials can be exploited to develop functional optoelectronic devices and optimize their functionality (sensitivity, emission quantum efficiency, maximum operating frequency, etc.).

Content(s)

Chapter I: Introduction

I.1 Semiconductors in the family of solids.
I.2 The different semiconductors.
I.3 Distinction between a metal and an insulator (or semiconductor).
I.4 Energy band structure in a semiconductor: dispersion relation.
I.5 Direct and indirect gap semiconductors.

Chapter II: Semiconductors under equilibrium and non equilibrium conditions

II.1 Intrinsic and extrinsic semiconductors at thermodynamic equilibrium.

II.2 Putting a semiconductor out of thermodynamic equilibrium by
electrical excitation :

a) Expression of electric current in a semiconductor.
b) Generation and recombination rates.
c) Continuity equation.

II.3 Thermodynamic non-equilibrium due to light excitation.

a) Absorption and reflection
b) Absorption mechanisms: Qualitative approach.
c) Stimulated emission: laser amplification.

Chapter III: Modeling absorption and emission

III.1 Spectral absorption rate.

III.2 Spectral rate of Spontaneous Emission.

III.3 Stimulated Emission Spectral Rate.

III.4 Global Spontaneous Emission Rate: Rsp

III.5 Stimulated Emission: Light amplification condition.

III.6 Radiative and non-radiative lifetimes.

Chapter IV: Semiconductor radiation emmiters and receivers

IV.1 Introduction

IV.2 The p-n junction, the tool for using photons
2.a - Reminder: the p-n silicon diode.
2.b - Light emission in a light-emitting diode (LED).
2.c - LED materials.
2.d - Response time, cut-off frequency.
2.e - LED structure

IV.3 Semiconductor laser diode
3.a - Laser principle: Reminder.
3.b - Laser diode structure: p-n junction.
3.c - Laser gain: stimulated emission condition.
3.d - Cavity oscillation condition.
3.e - Fine structure of the emission line.

Mathematics: Second-order differential equation with constant coefficients.
Electrical properties of materials, vibration and waves, chemical bonds
Physics of semiconductors
Physics of integrated electronic devices

Calendar

The course exists in the following branches:

• Curriculum - MAT - Semester 8

Additional Information

Course ID : KAMA8M01
Course language(s):

You can find this course among all other courses.

Bibliography

Bibliographie
- Physique des semi-conducteurs et des composants électroniques, H. Mathieu, Dunod (2001)
- Physics of Semiconductors devices, Sze, Wiley (1981).