- KAMP9M20

Goal(s)

The aim of this course is to present the mechanisms of crystal growth illustrated by examples taken from the field of semiconductor materials. The first part will present the basic principles of epitaxy and the two main growth techniques used in industry. The second part will be devoted to heteroepitaxy, which involves elastic and plastic deformation and leads to 4 distinct growth modes by minimizing the total energy of the system. A third part will deal specifically with the growth of nanostructures (quantum wells, nanowires and quantum boxes) and will open up new approaches such as growth on graphene. In addition, 2 important structural characterization techniques (transmission electron microscopy and grazing incidence X-ray diffraction) will be introduced and used in this course.